Mei Chang
175Patents
50h-index
218Co-inventors
93Inventor score
Filing activity: Aug 14, 1987 → Mar 27, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5846332A | Thermally floating pedestal collar in a chemical vapor deposition chamber | Electricity | 782 | Expired |
| US4854263A | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films | Chemistry; Metallurgy | 693 | Expired |
| US6079356A | Reactor optimized for chemical vapor deposition of titanium | Electricity | 621 | Expired |
| US6129044A | Apparatus for substrate processing with improved throughput and yield | Electricity | 546 | Expired |
| US8633115B2 | Methods for atomic layer etching | Electricity | 504 | Active |
| US6106625A | Reactor useful for chemical vapor deposition of titanium nitride | Electricity | 499 | Expired |
| US5213650A | Apparatus for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer | Electricity | 495 | Expired |
| US7049226B2 | Integration of ALD tantalum nitride for copper metallization | Electricity | 474 | Expired |
| US7204886B2 | Apparatus and method for hybrid chemical processing | Chemistry; Metallurgy | 471 | Expired |
| US9252024B2 | Deposition chambers with UV treatment and methods of use | Electricity | 453 | Active |
| US6099649A | Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal | Electricity | 417 | Expired |
| US4960488A | Reactor chamber self-cleaning process | Emerging Cross-Sectional Technologies | 414 | Expired |
| US6402806B1 | Method for unreacted precursor conversion and effluent removal | Electricity | 395 | Expired |
| US6432479B1 | Method for in-situ, post deposition surface passivation of a chemical vapor deposited film | Electricity | 362 | Expired |
| US5851299A | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions | Chemistry; Metallurgy | 359 | Expired |
| US9353440B2 | Dual-direction chemical delivery system for ALD/CVD chambers | Emerging Cross-Sectional Technologies | 351 | Active |
| US7591907B2 | Apparatus for hybrid chemical processing | Chemistry; Metallurgy | 350 | Active |
| US5516367A | Chemical vapor deposition chamber with a purge guide | Emerging Cross-Sectional Technologies | 349 | Expired |
| US9765432B2 | Dual-direction chemical delivery system for ALD/CVD chambers | Emerging Cross-Sectional Technologies | 345 | Active |
| USRE47440E1 | Apparatus and method for providing uniform flow of gas | General | 343 | Active |
| US5028565A | Process for CVD deposition of tungsten layer on semiconductor wafer | Emerging Cross-Sectional Technologies | 342 | Expired |
| US5855687A | Substrate support shield in wafer processing reactors | Electricity | 318 | Expired |
| US4842683A | Magnetic field-enhanced plasma etch reactor | Electricity | 303 | Expired |
| US6171661A | Deposition of copper with increased adhesion | Chemistry; Metallurgy | 299 | Expired |
| US7396480B2 | Method for front end of line fabrication | Electricity | 265 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.