Field-effect transistors with a grown silicon-germanium channel

US10559593B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Carsten Metze · Dresden, DE
• Berthold Reimer · Dresden, DE
• Simeon Morvan · Dresden, DE

Key dates

• Filing date: Aug 13, 2018
• Grant date: Feb 11, 2020
• Expiry date: Aug 13, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/0167
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A first channel region containing a first semiconductor material and a second channel region containing a second semiconductor material are formed over a buried insulating layer of a silicon-on-insulator substrate. A first gate electrode of a first field-effect transistor is formed over the first channel region. A second gate electrode of a second field-effect transistor is formed over the second channel region. The first semiconductor material of the first channel region has a first germanium concentration. The second semiconductor material of the second channel region has a second germanium concentration that is greater than the first germanium concentration in the first semiconductor material of the first channel region.