Methods and apparatus for dynamically treating atomic layer deposition films in physical vapor deposition chambers
US10563304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 7, 2017 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Nov 18, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Atomic layer deposition (ALD) processes are combined with physical vapor deposition (PVD) processes in a low pressure environment to produce a high quality barrier film. The initial barrier film is deposited on a substrate using ALD processes and then moved to a PVD chamber to treat the barrier film to increase the barrier film's density and purity, decreasing the barrier film's resistivity. A dual source of materials is sputtered onto the substrate to provide doping while a gas is simultaneously used to etch the substrate to release nitrogen. At least one source of material is positioned to provide doping at an acute angle to the surface of the substrate while supplied with DC power and RF power at a first RF power frequency. The substrate is biased using RF power at a second RF power frequency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.