Selective deposition of aluminum and nitrogen containing material

US10566185B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Han Wang · Cromwell, US
• Qi Xie · Wilsele, BE
• Delphine Longrie · Wondelgem, BE
• Jan Willem Maes · Wilrijk, BE
• David Kurt de Roest · Kessel-Lo, BE
• Julian Hsieh · Zhubei City, TW
• Chiyu Zhu · Helsinki, FI
• Timo Asikainen · Helsinki, FI

Key dates

• Filing date: Aug 5, 2015
• Grant date: Feb 18, 2020
• Expiry date: Aug 5, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76897
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.