Han Wang
14Patents
9h-index
29Co-inventors
64Inventor score
Filing activity: Aug 5, 2015 → Aug 1, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9803277B1 | Reaction chamber passivation and selective deposition of metallic films | Electricity | 74 | Active |
| US10041166B2 | Reaction chamber passivation and selective deposition of metallic films | Electricity | 51 | Active |
| US10480064B2 | Reaction chamber passivation and selective deposition of metallic films | Electricity | 43 | Active |
| US10121699B2 | Selective deposition of aluminum and nitrogen containing material | Electricity | 20 | Active |
| US10566185B2 | Selective deposition of aluminum and nitrogen containing material | Electricity | 19 | Active |
| US10553482B2 | Selective deposition of aluminum and nitrogen containing material | Electricity | 17 | Active |
| US10847361B2 | Selective deposition of aluminum and nitrogen containing material | Electricity | 15 | Active |
| US10903113B2 | Selective deposition of aluminum and nitrogen containing material | Electricity | 15 | Active |
| US10793946B1 | Reaction chamber passivation and selective deposition of metallic films | Electricity | 15 | Active |
| US11761081B2 | Methods for depositing tungsten or molybdenum films | Electricity | 1 | Active |
| US11380539B2 | Selective deposition of silicon nitride | Electricity | 0 | Active |
| US12252787B2 | Methods for depositing tungsten or molybdenum films | Electricity | 0 | Active |
| US11965239B2 | Method for nucleation of conductive nitride films | Electricity | 0 | Active |
| US11964881B2 | Method for making iridium oxide nanoparticles | Chemistry; Metallurgy | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.