Ultrathin atomic layer deposition film accuracy thickness control
US10566187B2 · kind B2 · utility
8Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2015 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Mar 20, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/332
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods for depositing ultrathin films by atomic layer deposition with reduced wafer-to-wafer variation are provided. Methods involve exposing the substrate to soak gases including one or more gases used during a plasma exposure operation of an atomic layer deposition cycle prior to the first atomic layer deposition cycle to heat the substrate to the deposition temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.