Patent · US Active

Doping method

US10566198B2 · kind B2 · utility

0Cited by

4References

23Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Hans-Joachim Schulze · Taufkirchen, DE
Johannes Baumgartl · Arnoldstein, AT
Helmut Oefner · Zorneding, DE

Key dates

Filing date	Sep 19, 2018
Grant date	Feb 18, 2020
Priority date	—
Expiry date	Sep 19, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/8503
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A first dose of first dopants is introduced into a semiconductor body having a first surface. A thickness of the semiconductor body is increased by forming a first semiconductor layer on the first surface of the semiconductor body. While forming the first semiconductor layer a final dose of doping in the first semiconductor layer is predominantly set by introducing at least 20% of the first dopants from the semiconductor body into the first semiconductor layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.