Systems and methods for anisotropic material breakthrough
US10566206B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2016 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Dec 27, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02079
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Processing methods may be performed to remove unwanted materials from a substrate, such as a native oxide material. The methods may include forming an inert plasma within a processing region of a processing chamber. Effluents of the inert plasma may be utilized to modify a surface of an exposed material on a semiconductor substrate within the processing region of the semiconductor chamber. A remote plasma may be formed from a fluorine-containing precursor to produce plasma effluents. The methods may include flowing the plasma effluents to the processing region of the semiconductor processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.