Methods of forming a semiconductor device, and related semiconductor devices and systems
US10566241B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2018 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Nov 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method of forming a semiconductor device comprises forming sacrificial structures and support pillars. The sacrificial structures comprise an isolated sacrificial structure in a slit region and connected sacrificial structures in a pillar region. Tiers are formed over the sacrificial structures and support pillars, and a portion of the tiers are removed to form tier pillars and tier openings, exposing the connected sacrificial structures and support pillars. The connected sacrificial structures are removed to form a cavity, a portion of the cavity extending below the isolated sacrificial structure. A cell film is formed over the tier pillars and over sidewalls of the cavity. A fill material is formed in the tier openings and over the cell film. A portion of the tiers in the slit region is removed, exposing the isolated sacrificial structure, which is removed to form a source opening. The source opening is connected to the cavity and a conductive material is formed in the source opening and in the cavity. Semiconductor devices and systems are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.