Darwin A. Clampitt
80Patents
12h-index
35Co-inventors
84Inventor score
Filing activity: Jan 18, 1996 → Feb 9, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6191444A | Mini flash process and circuit | Electricity | 97 | Expired |
| US6551878B2 | Mini flash process and circuit | Electricity | 53 | Expired |
| US6087263A | Methods of forming integrated circuitry and integrated circuitry structures | Emerging Cross-Sectional Technologies | 44 | Expired |
| US5932928A | Semiconductor circuit interconnections and methods of making such interconnections | Electricity | 38 | Expired |
| US6063656A | Cell capacitors, memory cells, memory arrays, and method of fabrication | Electricity | 31 | Expired |
| US6352932B1 | Methods of forming integrated circuitry and integrated circuitry structures | Emerging Cross-Sectional Technologies | 27 | Expired |
| US5798303A | Etching method for use in fabrication of semiconductor devices | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5773341A | Method of making capacitor and conductive line constructions | Electricity | 17 | Expired |
| US5936874A | High density semiconductor memory and method of making | Electricity | 16 | Expired |
| US6150691A | Spacer patterned, high dielectric constant capacitor | Electricity | 15 | Expired |
| US6414351B2 | Mini FLASH process and circuit | Electricity | 14 | Expired |
| US6716719B2 | Method of forming biasable isolation regions using epitaxially grown silicon between the isolation regions | Electricity | 12 | Expired |
| US6153903A | Cell capacitors, memory cells, memory arrays, and method of fabrication | Electricity | 11 | Expired |
| US5939741A | Methods of forming integrated circuitry and integrated circuitry structures | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6373123B1 | Semiconductor structure having more usable substrate area and method for forming same | Electricity | 10 | Expired |
| US6204114A | Method of making high density semiconductor memory | Electricity | 9 | Expired |
| US6190965A | Spacer patterned, high dielectric constant capacitor | Electricity | 8 | Expired |
| US5994232A | Etching method for use in fabrication semiconductor device | Emerging Cross-Sectional Technologies | 7 | Expired |
| US10566241B1 | Methods of forming a semiconductor device, and related semiconductor devices and systems | Electricity | 7 | Active |
| US6034417A | Semiconductor structure having more usable substrate area and method for forming same | Electricity | 7 | Expired |
| US6455367B2 | Method of making high density semiconductor memory | Electricity | 7 | Expired |
| US6566702B1 | Spacer patterned, high dielectric constant capacitor | Electricity | 7 | Expired |
| US6081033A | Interconnections for semiconductor circuits | Electricity | 6 | Expired |
| US6403430B1 | Semiconductor structure having more usable substrate area and method for forming same | Electricity | 6 | Expired |
| US6815754B2 | Spacer patterned, high dielectric constant capacitor | Electricity | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.