Semiconductor device and method of manufacturing the same
US10566280B2 · kind B2 · utility
3Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2018 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Aug 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, a semiconductor device includes a first insulator. The device further includes a metal layer that includes a first metal layer provided on a surface of the first insulator, and a second metal layer provided on a surface of the first metal layer and containing a first metallic element and oxygen or containing aluminum and nitrogen, or includes a third metal layer provided on the surface of the first insulator and containing a second metallic element, aluminum and nitrogen. The device further includes an interconnect material layer provided on a surface of the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.