Semiconductor device with improved field layer
US10566416B2 · kind B2 · utility
0Cited by
5References
23Claims
0Family size
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Key dates
| Filing date | Aug 15, 2018 |
| Grant date | Feb 18, 2020 |
| Priority date | — |
| Expiry date | Aug 15, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device constituted of: a semiconductor layer; and a field layer patterned on said semiconductor layer, said field layer constituted of material having characteristics which block diffusion of mobile ions and maintain structural integrity at activation temperatures of up to 1200 degrees centigrade.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.