Nathaniel Berliner
8Patents
3h-index
29Co-inventors
49Inventor score
Filing activity: Oct 22, 2009 → Aug 15, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9105559B2 | Conformal doping for FinFET devices | Electricity | 13 | Active |
| US8900973B2 | Method to enable compressively strained pFET channel in a FinFET structure by implant and thermal diffusion | Electricity | 12 | Active |
| US8796128B2 | Dual metal fill and dual threshold voltage for replacement gate metal devices | Electricity | 9 | Active |
| US8927422B2 | Raised silicide contact | Electricity | 3 | Active |
| US8124427B2 | Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness | Electricity | 2 | Active |
| US9018024B2 | Creating extremely thin semiconductor-on-insulator (ETSOI) having substantially uniform thickness | Emerging Cross-Sectional Technologies | 0 | Active |
| US8940554B2 | Method of creating an extremely thin semiconductor-on-insulator (ETSOI) layer having a uniform thickness | Electricity | 0 | Active |
| US10566416B2 | Semiconductor device with improved field layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.