Chemical mechanical polishing pad and polishing method
US10569384B1 · kind B1 · utility
2Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2018 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Nov 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/7684
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present invention concerns a chemical mechanical polishing pad having a polishing layer that possesses a consistent positive zeta potential across the entire surface. Also disclosed is a chemical mechanical polishing method using the polishing pad together with a positively charged slurry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.