Patent · US Active

Gas separation control in spatial atomic layer deposition

US10570511B2 · kind B2 · utility

1Cited by
1References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 31, 2015
Grant dateFeb 25, 2020
Priority date
Expiry dateOct 3, 2037

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/45557
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.