Gas separation control in spatial atomic layer deposition
US10570511B2 · kind B2 · utility
1Cited by
1References
13Claims
0Family size
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Key dates
| Filing date | Aug 31, 2015 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Oct 3, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45557
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.