Hessian-free calculation of product of Hessian matrix and vector for lithography optimization
US10571799B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2018 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Aug 27, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21K5/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for optimizing a binary mask pattern includes determining, by a processor, an evaluation value based on a comparison between a design pattern and a substrate pattern simulated based on the binary mask pattern. The method also includes, based on the evaluation value, using, by the processor, a gradient-based optimization method to generate a first adjusted binary mask pattern. The method also includes determining, by the processor, a first updated evaluation value based on a comparison between the design pattern and a first updated substrate pattern simulated based on the first adjusted binary mask pattern. The method also includes, based on the first updated evaluation value, using, by the processor, a product of a Hessian matrix and an arbitrary vector to generate a second adjusted binary mask pattern. The method also includes simulating, by the processor, a second updated substrate pattern based on the second adjusted binary mask pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.