Ferroelectric based memory cell with non-volatile retention
US10573385B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2015 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | May 28, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Described is an apparatus which comprises: a first access transistor controllable by a write word-line (WWL); a second access transistor controllable by a read word-line (RWL); and a ferroelectric cell coupled to the first and second access transistors, wherein the ferroelectric cell is programmable via the WWL and readable via the RWL. Described is a method which comprises: driving a WWL, coupled to a gate terminal of a first access transistor, to cause the first access transistor to turn on; and driving a WBL coupled to a source/drain terminal of the first access transistor, the driven WBL to charge or discharge a storage node coupled to the first access transistor when the first access transistor is turned on, wherein the ferroelectric cell is coupled to the storage node and programmable according to the charged or discharged storage node.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.