Method of forming silicon-containing film
US10573514B2 · kind B2 · utility
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Key dates
| Filing date | Nov 21, 2018 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Nov 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a silicon-containing film includes: an adsorption step of supplying a silicon-containing gas represented by a general formula XSiCl3 (wherein X is an element whose bonding energy with Si is smaller than bonding energy of a Si—Cl bond) into a processing chamber accommodating substrates to cause the silicon-containing gas to be adsorbed to a surface of each of the substrates; and a reaction step of supplying a reaction gas reacting with the silicon-containing gas into the processing chamber to cause the silicon-containing gas adsorbed to the surface of each of the substrates to react with the reaction gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.