Gas-phase selective etching systems and methods
US10573527B2 · kind B2 · utility
1Cited by
932References
20Claims
0Family size
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Key dates
| Filing date | Apr 5, 2019 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Apr 5, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02244
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing ammonia into the substrate processing region at a temperature above about 200° C. The methods may further include removing an amount of the metal-containing material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.