Microelectronic devices designed with high frequency communication devices including compound semiconductor devices integrated on a die fabric on package
US10573608B2 · kind B2 · utility
6Cited by
1References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2015 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Dec 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6677
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention include a microelectronic device that includes a first die having a silicon based substrate and a second die coupled to the first die. In one example, the second die is formed with compound semiconductor materials. The microelectronic device includes a substrate that is coupled to the first die with a plurality of electrical connections. The substrate including an antenna unit for transmitting and receiving communications at a frequency of approximately 4 GHz or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.