Patent · US Active

Solder metallization stack and methods of formation thereof

US10573611B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Kamil Karlovsky · Villach, AT
Evelyn Napetschnig · Diex, AT
Michael Ehmann · Villach, AT
Mark Harrison · Wernberg, AT
Anton Pugatschow · Soest, DE

Key dates

Filing date	Oct 17, 2018
Grant date	Feb 25, 2020
Priority date	—
Expiry date	Oct 17, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/04953
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes a contact metal layer disposed over a semiconductor surface of a substrate, a diffusion barrier layer disposed over the contact metal layer, an inert layer disposed over the diffusion barrier layer, and a solder layer disposed over inert layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.