Horizontal gate all around device isolation
US10573719B2 · kind B2 · utility
2Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2016 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Sep 28, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein generally relate to methods and apparatus for horizontal gate all around (hGAA) isolation. A superlattice structure comprising different materials arranged in an alternatingly stacked formation may be formed on a substrate. The different materials may be silicon containing materials and one or more III/V materials. In one embodiment, at least one of the layers of the superlattice structure may be oxidized to form a buried oxide layer adjacent the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.