Semiconductor transistor and method for forming the semiconductor transistor
US10573731B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2017 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Nov 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical semiconductor field-effect transistor includes a semiconductor body having a front side, and a field electrode trench extending from the front side into the semiconductor body. The field electrode trench includes a field electrode and a field dielectric arranged between the field electrode and the semiconductor body. The vertical semiconductor field-effect transistor further includes a gate electrode trench arranged next to the field electrode trench, extending from the front side into the semiconductor body, and having two electrodes which are separated from each other and the semiconductor body. A front side metallization is arranged on the front side and in contact with the field electrode and at most one of the two electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.