Resistive random access memory with deuterium

US10573809B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Prashant Majhi · San Jose, US
• Ravi Pillarisetty · Portland, US
• Uday Shah · Portland, US
• Elijah V. Karpov · Portland, US
• Niloy Mukherjee · Beaverton, US
• Pulkit Jain · Hillsboro, US
• Aravind S. Killampalli · Hillsboro, US
• Jay P. Gupta · Hillsboro, US
• James S. Clarke · Portland, US

Key dates

• Filing date: Mar 31, 2016
• Grant date: Feb 25, 2020
• Expiry date: Mar 31, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8836

Abstract

An embodiment includes a memory comprising: a top electrode and a bottom electrode; an oxygen exchange layer (OEL) between the top and bottom electrodes; and an oxide layer between the OEL and the bottom electrode; wherein the oxide layer includes Deuterium and oxygen vacancies. Other embodiments are described herein.