Main-auxiliary field-effect transistor structures for radio frequency applications
US10574227B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2017 |
| Grant date | Feb 25, 2020 |
| Priority date | — |
| Expiry date | Sep 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04B1/38
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are switching or other active FET configurations that implement a main-auxiliary branch design. Such designs include a circuit assembly for performing a switching function that includes a branch including a main path in parallel with an auxiliary path. The circuit assembly also includes a gate bias network connected to the main path and to the auxiliary path, the main path and the auxiliary path each having different structures that are configured to improve linearity of the switching function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.