Patent · US Active

Ruthenium precursors for ALD and CVD thin film deposition and uses thereof

US10577386B2 · kind B2 · utility

2Cited by
1References
11Claims
0Family size

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Key dates

Filing dateDec 5, 2017
Grant dateMar 3, 2020
Priority date
Expiry dateDec 5, 2037

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/50
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.