Ruthenium precursors for ALD and CVD thin film deposition and uses thereof
US10577386B2 · kind B2 · utility
2Cited by
1References
11Claims
0Family size
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Key dates
| Filing date | Dec 5, 2017 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Dec 5, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R′ is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.