Alternating hardmasks for tight-pitch line formation

US10580652B2 · kind B2 · utility

Assignee

• TESSERA LLC · US

Inventors

• John C. Arnold · North Chatham, US
• Anuja E. DeSilva · Slingerlands, US
• Nelson Felix · Slingerlands, US
• Chi-Chun Liu · Altamont, US
• Yann Mignot · Slingerlands, US
• Stuart A. Sieg · Albany, US

Key dates

• Filing date: Aug 8, 2018
• Grant date: Mar 3, 2020
• Expiry date: Aug 8, 2038

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/95
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods of forming fins include masking a region on a three-color hardmask fin pattern, leaving a fin of a first color exposed. The exposed fin of the first color is etched away with a selective etch that does not remove fins of a second color or a third color. The mask and all fins of a second color are etched away. Fins are etched into a fin base layer using the fins of the first color and the fins of the third color.