Interconnects formed by a metal displacement reaction
US10580696B1 · kind B1 · utility
3Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 21, 2018 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Aug 21, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures for interconnects and methods of forming interconnects. An interconnect opening in a dielectric layer includes a first portion and a second portion arranged over the first portion. A first conductor layer composed of a first metal is arranged inside the first portion of the interconnect opening. A second conductor layer composed of a second metal is arranged inside the second portion of the interconnect opening. The first metal is ruthenium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.