Semiconductor structure for electrostatic discharge protection

US10580765B1 · kind B1 · utility

Assignee

• NANYA TECHNOLOGY CORPORATION · TW

Inventors

• Fang-Wen Liu · New Taipei, TW
• Tseng-Fu Lu · New Taipei, TW

Key dates

• Filing date: Dec 2, 2018
• Grant date: Mar 3, 2020
• Expiry date: Dec 2, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/401

Abstract

A semiconductor structure includes a silicon control rectifier (SCR) region and a NPN region adjacent to the SCR region. The silicon control rectifier (SCR) region includes a first p-well region, a first n-well region surrounded by the first p-well region and a first P+ region in the first p-well region and spaced apart from the first n-well region. The NPN region includes a second p-well region, a first N+ region, a second N+ region and a second P+ region. The first N+ region is coupled to the second p-well region and an electrostatic discharge source. The second N+ region is coupled to the second p-well region and spaced apart from the first N+ region. The second P+ region is disposed in the second p-well region and equipotentially connected to the first P+ region in the first p-well region.