Nucleation layer for growth of III-nitride structures

US10580871B2 · kind B2 · utility

Assignee

• IQE plc · GB

Inventors

• Oleg Laboutin · South Easton, US
• Chen-Kai Kao · Lexington, US
• Chien-Fong Lo · Braintree, US
• Wayne Johnson · Phoenix, US
• Hugues Marchand · Somerville, US

Key dates

• Filing date: Mar 12, 2018
• Grant date: Mar 3, 2020
• Expiry date: Mar 12, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/854
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Nucleation layers for growth of III-nitride structures, and methods for growing the nucleation layers, are described herein. A semiconductor can include a silicon substrate and a nucleation layer over the silicon substrate. The nucleation layer can include silicon and deep-level dopants. The semiconductor can include a III-nitride layer formed over the nucleation layer. At least one of the silicon substrate and the nucleation layer can include ionized contaminants. In addition, a concentration of the deep-level dopants is at least as high as a concentration of the ionized contaminants.