Faceted sidewall magnetic tunnel junction structure
US10580966B1 · kind B1 · utility
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13References
9Claims
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Key dates
| Filing date | Sep 7, 2018 |
| Grant date | Mar 3, 2020 |
| Priority date | — |
| Expiry date | Sep 7, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction (MTJ) structure having faceted sidewalls is formed on a conductive landing pad that is present on a surface of an electrically conductive structure embedded in a dielectric material layer. No metal ions are re-sputtered onto the sidewalls of the MTJ structure during the patterning of the MTJ material stack that provides the MTJ structure. The absence of re-sputtered metal on the MTJ structure sidewalls reduces the risk of shorts.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.