Patent · US Active

Method for manufacturing pairs of CMOS transistors of the “fin-FET” type at low temperatures

US10586740B2 · kind B2 · utility

1Cited by
3References
13Claims
0Family size

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Key dates

Filing dateNov 15, 2018
Grant dateMar 10, 2020
Priority date—
Expiry dateNov 15, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D88/01
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Method for producing a device provided with FinFET transistors, comprising the following steps:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.