Benoit Mathieu
9Patents
2h-index
18Co-inventors
40Inventor score
Filing activity: Nov 24, 2015 → Dec 15, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10147818B2 | Enhanced method of stressing a transistor channel zone | Electricity | 2 | Active |
| US10115637B2 | Method for fabricating auto-aligned interconnection elements for a 3D integrated circuit | Electricity | 2 | Active |
| US10586740B2 | Method for manufacturing pairs of CMOS transistors of the “fin-FET” type at low temperatures | Electricity | 1 | Active |
| US9853130B2 | Method of modifying the strain state of a semiconducting structure with stacked transistor channels | Electricity | 0 | Active |
| US12135260B2 | Bench for mechanically characterising thin objects with increased reliability | Emerging Cross-Sectional Technologies | 0 | Active |
| US12140573B2 | Bench for mechanical characterisation of thin objects | Emerging Cross-Sectional Technologies | 0 | Active |
| US9997395B2 | Fabrication method of a stack of electronic devices | Electricity | 0 | Active |
| US9786658B2 | Fabrication method of a stack of electronic devices | Electricity | 0 | Active |
| US12252807B2 | Process for obtaining a nitride layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.