Patent · US Active

SOI substrate compatible with the RFSOI and FDSOI technologies

US10586810B2 · kind B2 · utility

0Cited by

0References

7Claims

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Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Yann Lamy · Voiron, FR
Lamine Benaissa · Massy, FR
Etienne Navarro · Grenoble, FR

Key dates

Filing date	Jun 8, 2018
Grant date	Mar 10, 2020
Priority date	—
Expiry date	Jun 8, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/01
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor on insulator type substrate, comprising at least: in which the trap rich layer comprises at least one first region and at least one second region adjacent to each other in the plane of the trap rich layer, the material of the at least one first region being in an at least partially recrystallized state and having an electrical resistivity less than that of the material in the at least one second region.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.