Substrate support for plasma etch operations
US10593521B2 · kind B2 · utility
0Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2013 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Apr 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for processing substrates are disclosed herein. In some embodiments, a substrate support to support a substrate in a processing chamber includes a dielectric insulator plate; a conductive plate supported on the dielectric insulator plate, the conductive plate comprising a top surface and a bottom surface defining a thickness between the top surface and the bottom surface, wherein an edge portion of the conductive plate tapers in a radially outward direction; and a dielectric plate comprising a substrate support surface disposed upon the top surface of the conductor plate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.