Semiconductor structure with capacitor landing pad and method of make the same
US10593677B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 8, 2018 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Apr 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
Abstract
The present invention discloses a semiconductor structure with capacitor landing pad and a method for fabricating a capacitor landing pad. The semiconductor structure with capacitor landing pad includes a substrate having a plurality of contact structures, a first dielectric layer disposed on the substrate and the contact structures, and a plurality of capacitor landing pads, each of the capacitor landing pads being located in the first dielectric layer and electrically connected to the contact structure, wherein the capacitor landing pads presents a shape of a wide top and a narrow bottom and a top surface of the capacitor landing pads have a concave shape.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.