Methods of forming semiconductor devices using aspect ratio dependent etching effects, and related semiconductor devices
US10593678B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 2018 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Aug 24, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4087
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of forming a semiconductor device comprises forming a patterned masking material comprising parallel structures and parallel trenches extending at a first angle from about 30° to about 75° relative to a lateral direction. A mask is provided over the patterned masking material and comprises additional parallel structures and parallel apertures extending at a second, different angle from about 0° to about 90° relative to the lateral direction. The patterned masking material is further patterned using the mask to form a patterned masking structure comprising elongate structures separated by the parallel trenches and additional parallel trenches. Exposed portions of a hard mask material underlying the patterned masking structure are subjected to ARDE to form a patterned hard mask material. Exposed portions of a semiconductive material underlying the patterned hard mask material are removed to form semiconductive pillar structures. Semiconductor devices and electronic systems are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.