Integrated circuits and methods for fabricating integrated circuits with magnetic tunnel junction (MTJ) structures
US10593728B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2018 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Dec 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Integrated circuits and methods for fabricating magnetic tunnel junction (MTJ) structures and integrated circuits are provided. An exemplary method for fabricating an integrated circuit including a magnetic tunnel junction (MTJ) structure includes forming magnetic tunnel junction (MTJ) layers over a substrate. Further, the method includes forming a conductive pillar over the MTJ layers, wherein the conductive pillar is formed with an uppermost surface, and wherein the uppermost surface is not planarized. Also, the method includes etching the MTJ layers to form a pillar structure from portions of the MTJ layers underlying the conductive pillar.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.