Semiconductor device
US10593793B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 10, 2018 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Sep 10, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/143
Abstract
A semiconductor device according to an embodiment includes: a first semiconductor region of a first conductive type; a base region of a second conductive type; gate electrodes penetrating through the base region to reach the first semiconductor region; gate insulating films around the plurality of gate electrodes; a first region having a source region of the first conductive type, among a plurality of regions between the plurality of gate insulating films; a second region not having the source region among the plurality of regions, the second region being located in a terminal region of the first region; a first contact of a first width in the first region and electrically connecting the base region and a source electrode; and a second contact of a second width larger than the first width, the second contact being in the second region and electrically connecting the base region and the source electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.