Magnetic field assisted MRAM structures, integrated circuits, and methods for fabricating the same
US10593866B2 · kind B2 · utility
0Cited by
1References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2018 |
| Grant date | Mar 17, 2020 |
| Priority date | — |
| Expiry date | Jun 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Magnetic field assisted magnetoresistive random access memory (MRAM) structures, integrated circuits including MRAM structures, and methods for fabricating integrated circuits including MRAM structures are provided. An exemplary integrated circuit includes a magnetoresistive random access memory (MRAM) structure and a magnetic field assist structure to generate a selected net magnetic field on the MRAM structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.