Metrology guided inspection sample shaping of optical inspection results
US10598617B2 · kind B2 · utility
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12References
16Claims
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Key dates
| Filing date | Aug 8, 2017 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Dec 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Information from metrology tools can be used during inspection or review with a scanning electron microscope. Metrology measurements of a wafer are interpolated and/or extrapolated over a field, which creates modified metrology data. The modified metrology data is associated with defect attributes from inspection measurements of a wafer. A wafer review sampling plan is generated based on the defect attributes and the modified metrology data. The wafer review sampling plan can be used during review of a wafer using the scanning electron microscope.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.