Magnetic storage device having a memory cell including a magnetoresistive effect element and a selector which includes titanium (Ti), germanium (Ge) and tellurium (Te)
US10600463B2 · kind B2 · utility
3Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 9, 2018 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Aug 9, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/35
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetic device includes a first memory cell including a magnetoresistive effect element and a selector, the selector including titanium (Ti), germanium (Ge) and tellurium (Te).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.