Formation of SiOC thin films
US10600637B2 · kind B2 · utility
336Cited by
121References
19Claims
0Family size
Assignee
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Key dates
| Filing date | May 5, 2017 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | May 5, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for depositing silicon oxycarbide (SiOC) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor that does not comprise nitrogen and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOC films having improved acid-based wet etch resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.