Inventor · Helsinki, FI

Viljami Pore

123Patents
23h-index
60Co-inventors
89Inventor score

Filing activity: May 29, 2008 → Oct 20, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9129897B2 Metal silicide, metal germanide, methods for making the same Electricity 533 Active
US9895715B2 Selective deposition of metals, metal oxides, and dielectrics Chemistry; Metallurgy 495 Active
US9786491B2 Formation of SiOCN thin films Electricity 456 Active
US9812320B1 Method and apparatus for filling a gap Electricity 453 Active
US8846502B2 Methods for depositing thin films comprising gallium nitride by atomic layer deposition Electricity 449 Active
US9887082B1 Method and apparatus for filling a gap Electricity 448 Active
US10047435B2 Dual selective deposition Electricity 440 Active
US9523148B1 Process for deposition of titanium oxynitride for use in integrated circuit fabrication Electricity 419 Active
US10177025B2 Method and apparatus for filling a gap Electricity 398 Active
US10395917B2 Si precursors for deposition of SiN at low temperatures Electricity 388 Active
US10600637B2 Formation of SiOC thin films Electricity 336 Active
US9824881B2 Si precursors for deposition of SiN at low temperatures Electricity 284 Active
US10424477B2 Si precursors for deposition of SiN at low temperatures Electricity 282 Active
US10424476B2 Formation of SiOCN thin films Electricity 274 Active
US10510529B2 Formation of SiOCN thin films Electricity 271 Active
US10741386B2 Deposition of SiN Electricity 265 Active
US9786492B2 Formation of SiOCN thin films Electricity 59 Active
US10373820B2 Deposition of organic films Electricity 48 Active
US10453701B2 Deposition of organic films Electricity 46 Active
US10343186B2 Vapor phase deposition of organic films Performing Operations; Transporting 44 Active
US10695794B2 Vapor phase deposition of organic films Electricity 44 Active
US10443123B2 Dual selective deposition Electricity 41 Active
US9564309B2 Si precursors for deposition of SiN at low temperatures Electricity 23 Active
US10872765B2 Selective layer formation using deposition and removing Electricity 21 Active
US9576792B2 Deposition of SiN Electricity 16 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.