Directed self-assembly for copper patterning
US10600656B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2017 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Nov 21, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming patterned copper lines, a pattern of copper lines, and an electronic device having patterned copper lines and at least one CMOS circuit. The process includes assembling an etch stack, wherein the etch stack includes a resist and a copper substrate. The process also includes lithographically patterning the resist to produce a template, and forming a patterned block copolymer mask layer by directed self-assembly. Additionally, the process includes etching portions of the block copolymer mask layer to produce a patterned block copolymer mask layer, and transferring a pattern formed by the template and the patterned block copolymer mask layer to the copper substrate to form the patterned copper lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.