Self-repairing field effect transisitor
US10600902B2 · kind B2 · utility
0Cited by
62References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 13, 2008 |
| Grant date | Mar 24, 2020 |
| Priority date | — |
| Expiry date | Feb 13, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A self repairing field effect transistor (FET) device, in accordance with one embodiment, includes a plurality of FET cells each having a fuse link. The fuse links are adapted to blow during a high current event in a corresponding cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.