Robert Xu
27Patents
11h-index
27Co-inventors
71Inventor score
Filing activity: Jun 21, 2002 → Apr 5, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7183610B2 | Super trench MOSFET including buried source electrode and method of fabricating the same | Electricity | 74 | Expired |
| US7544545B2 | Trench polysilicon diode | Electricity | 20 | Active |
| US8080459B2 | Self aligned contact in a semiconductor device and method of fabricating the same | Electricity | 18 | Active |
| US7557409B2 | Super trench MOSFET including buried source electrode | Electricity | 18 | Active |
| US7279743B2 | Closed cell trench metal-oxide-semiconductor field effect transistor | Electricity | 18 | Expired |
| US8367500B1 | Method of forming self aligned contacts for a power MOSFET | Electricity | 17 | Expired |
| US7012005B2 | Self-aligned differential oxidation in trenches by ion implantation | Electricity | 16 | Expired |
| US7833863B1 | Method of manufacturing a closed cell trench MOSFET | Electricity | 16 | Active |
| US8629019B2 | Method of forming self aligned contacts for a power MOSFET | Electricity | 16 | Expired |
| US9883781B2 | All in the head surface cleaning apparatus | Human Necessities | 15 | Active |
| US7361558B2 | Method of manufacturing a closed cell trench MOSFET | Electricity | 15 | Expired |
| US6709930B2 | Thicker oxide formation at the trench bottom by selective oxide deposition | Electricity | 10 | Expired |
| US9431550B2 | Trench polysilicon diode | Electricity | 8 | Active |
| US6858471B1 | Semiconductor substrate with trenches for reducing substrate resistance | Electricity | 6 | Expired |
| US7642164B1 | Method of forming self aligned contacts for a power MOSFET | Electricity | 4 | Expired |
| US7704836B2 | Method of fabricating super trench MOSFET including buried source electrode | Electricity | 4 | Active |
| US9795264B2 | All in the head surface cleaning apparatus | Human Necessities | 3 | Active |
| US9431530B2 | Super-high density trench MOSFET | Electricity | 3 | Active |
| US9306056B2 | Semiconductor device with trench-like feed-throughs | Electricity | 2 | Active |
| US9722041B2 | Breakdown voltage blocking device | Electricity | 1 | Active |
| US9230810B2 | System and method for substrate wafer back side and edge cross section seals | Electricity | 1 | Active |
| US7612431B2 | Trench polysilicon diode | Electricity | 1 | Active |
| US8072013B1 | Trench polysilicon diode | Electricity | 1 | Active |
| US10600902B2 | Self-repairing field effect transisitor | Electricity | 0 | Active |
| US10032901B2 | Semiconductor device with trench-like feed-throughs | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.