Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US10604842B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2019 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Mar 20, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a technique that includes: (a) supplying a hydrogen gas to a substrate set to a first temperature, without supplying any oxygen-containing gas; (b) changing a temperature of the substrate from the first temperature to a second temperature, which is higher than the first temperature, while the hydrogen gas is supplied to the substrate, without supplying any oxygen-containing gas; and (c) forming an oxide film on the substrate, on which (a) and (b) have been performed, by alternately repeating, while the temperature of the substrate is maintained at the second temperature: supplying a precursor gas to the substrate; and supplying an oxygen-containing gas to the substrate, without supplying any hydrogen-containing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.