Method and recording medium of reducing chemoepitaxy directed self-assembled defects
US10606980B2 · kind B2 · utility
1Cited by
6References
20Claims
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Key dates
| Filing date | Jul 17, 2018 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Jul 25, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/02
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for reducing chemo-epitaxy directed-self assembly (DSA) defects of a layout of a guiding pattern, the method comprising: inserting a first external dummy along an external edge of the guiding pattern in a vertical direction; and inserting a second external dummy at a fixed distance from a second edge of the first external dummy, wherein the second external dummy includes a two-dimensional shape such that at least two edges of the second external dummy are parallel to the second edge of the first external dummy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.