Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US10607833B2 · kind B2 · utility
1Cited by
14References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 2016 |
| Grant date | Mar 31, 2020 |
| Priority date | — |
| Expiry date | Dec 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a method of manufacturing a semiconductor device, including forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing supplying a precursor gas to the substrate; and supplying a first oxygen-containing gas to the substrate. Further, the act of supplying the precursor gas includes a time period in which the precursor gas and a second oxygen-containing gas are simultaneously supplied to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.